| PART |
Description |
Maker |
| IXTD8P50-5B IXTD16P20-5B IXTD36P10-5B |
500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
200 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
|
IXYS, Corp.
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IXFN230N1008 |
Power MOSFET Single Die MOSFET
|
IXYS Corporation
|
| GP60PF-1A |
60 AMP PRESS FIT HIGH VOLTAGE DIODES (GPP DIE)
|
Diodes Incorporated
|
| GP50PF-1A |
50 AMP PRESS FIT HIGH VOLTAGE DIODES (GPP DIE)
|
Diodes Incorporated
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IXFN34N100 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IXFN130N30 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| S2305 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
|
